Armenian Journal of Physics

Impedance characteristics of p-Si /BaxSr1-xTiO3 heterojunction prepared by pulsed laser deposition method

Buniatyan, V.V. and Davtyan, A. and Begoyan, V. and Dashtoyan, H.R. (2018) Impedance characteristics of p-Si /BaxSr1-xTiO3 heterojunction prepared by pulsed laser deposition method. Armenian Journal of Physics, 11 (2). pp. 84-90. ISSN 1829-1171

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Abstract

p-Si/BaxSr1-xTiO3 heterojunction properties are investigated by electrochemical impedance spectroscopy method for the first time. The general equivalent circuit model is proposed in circuit description code as: Cf, Rf, Ch,Rh,Rp, where Cf, Rf are the BaxSr1-xTiO3 film conditioned capacitance and resistance, Ch, Rh are the heterojunction depletion layer capacitance and resistance, respectively, Rp is the series resistance. It is stated that the Bode plot curves of the structure in air mostly affected by the depletion layer capacitance of heterojunction Ch(V) .

Item Type:Article
Subjects:Physics > 73.Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures
Physics > 81.Materials science
ID Code:954
Deposited By:Prof. Vladimir Aroutiounian
Deposited On:14 Jul 2018 19:05
Last Modified:14 Jul 2018 19:05

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