Armenian Journal of Physics

DETERMINATION OF SPREADING PARAMETER IN MULTI-VALLEY SEMICONDUCTORS

Vahanyan, A.I. (2008) DETERMINATION OF SPREADING PARAMETER IN MULTI-VALLEY SEMICONDUCTORS. Armenian Journal of Physics, 1 (1). pp. 70-73. ISSN 1829-1171

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Abstract

In recent years the thermoelectric properties of materials (specifically solid solutions on the basis of lead [1, 2]), in which conduction band (in the case of n-type semiconductor) or valence band (in the case of p-type semiconductor) has a two-valley structure are often investigated. During the analyses of experimental findings of thermoelectric properties it is very important to have the value of parameter -index of power in the dependence of the free path on the energy, which we’ll briefly denominate spreading parameter.

Item Type:Article
Subjects:Physics > 72.Electronic transport in condensed matter
ID Code:9
Deposited By:INVALID USER
Deposited On:26 Apr 2008 14:15
Last Modified:19 Apr 2011 02:39

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