Armenian Journal of Physics

THE DARK CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF NEAR-INFRARED SENSITIVE (p)InSb/(n)CdTe HETEROSTRUCTURE

Margaryan, A. (2016) THE DARK CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF NEAR-INFRARED SENSITIVE (p)InSb/(n)CdTe HETEROSTRUCTURE. Armenian Journal of Physics, 9 (1). pp. 1-5. ISSN 1829-1171

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Abstract

Results of studies of dark current-voltage and capacitance-voltage characteristics of near-infrared sensitive (p)InSb/(n)CdTe heterostructure are presented. It is shown that the junction fabricated by the pulsed laser deposition (PLD) technology has a low number of states at the interface, which leads to the electrical properties explained by physical characteristics of heterostructure pairs.

Item Type:Article
Subjects:Physics > 81.Materials science
ID Code:785
Deposited By:Mr Artsruni Margaryan
Deposited On:19 Mar 2016 09:01
Last Modified:19 Mar 2016 09:01

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