Aroutiounian, V.M. and Arakelyan, V.M and Galstyan, V.E. and Martirosyan, Kh.S. and Soukiassian, P.G. (2008) MANUFACTURE AND INVESTIGATION OF HYDROGEN SENSITIVE TiO2-x OR ZnO<Al> FILM-POROUS SILICON DEVICES. Armenian Journal of Physics, 1 (3). pp. 219-226. ISSN 1829-1171
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Hydrogen sensor working at room and 40°C temperatures made of porous silicon covered by the TiO2x or ZnO<Al> thin film was realized. Porous silicon layer was formed by electrochemical anodization on a p- and n-type Si surface. Thereafter, n-type TiO2-x and ZnO<Al> thin films were deposited onto the porous silicon surface by electron-beam evaporation and magnetron sputtering, respectively. Platinum catalytic layer and Au electric contacts were for further measurements deposited onto obtained structures by ion-beam sputtering. The sensitivity of manufactured structures to 1000–5000 ppm of hydrogen, propane–butane mixture, and humidity was studied. The sensitivity of obtained structures was determined as ratio of the resistivity of structures in the presence of investigated gas to that in air. Results of sensitivity measurements showed that it is possible to realize a hydrogen sensor, resistivity of which can be decreased up to 2.5 times at room temperature and 4 times at 40°C for the Pt/TiO2-x/PS structure, as well as 2 times for the Pt/ZnO<Al>/PS structure at 40°C at 5000 ppm hydrogen concentration, respectively. Both structures have the recovery and response time of approximately 20 sec and rather high durability and selectivity to hydrogen gas.
|Subjects:||Physics > 73.Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures|
|Deposited By:||Prof. Vladimir Aroutiounian|
|Deposited On:||10 Dec 2008 17:39|
|Last Modified:||19 Apr 2011 03:40|
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