Armenian Journal of Physics

Optical Response of UV Laser Irradiated Extrinsic Semiconductor

Sardar, Maryam and Ullah, Zaka and Latif, Anwar and Jabar, Bushra and Perveen, Abida and Rafique, Muhammad Shahid and Khaleeq-Ur-Rahman, Muhammad (2015) Optical Response of UV Laser Irradiated Extrinsic Semiconductor. Armenian Journal of Physics, 8 (2). pp. 79-84. ISSN 1829-1171

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Fine polished samples of p-silicon were irradiated in ambient air using Excimer Laser and Spectroscopic Ellipsometry was employed to investigate their various optical properties. The changes in optical constants (refractive index and extinction coefficient) and optical band gap energy were noticed in incident wavelength range 500–1000 nm. Both refractive index and extinction coefficient decrease exponentially before and after irradiation. A fall in the optical band gap energy of p-silicon was also observed after laser exposure, which makes the materials suitable for variety of optoelectronics applications.

Item Type:Article
Subjects:Physics > 42.Optics
Physics > 84.Electronics; radiowave and microwave technology; direct energy conversion and storage
ID Code:740
Deposited By:Prof. Vladimir Aroutiounian
Deposited On:12 Apr 2015 13:41
Last Modified:18 Apr 2015 07:44

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