Armenian Journal of Physics

Electron-polar optical phonon field-induced tunnel scatterings in a polar semiconductor under electric field

Harutyunyan, A.L. (2015) Electron-polar optical phonon field-induced tunnel scatterings in a polar semiconductor under electric field. Armenian Journal of Physics, 8 (1). pp. 38-43. ISSN 1829-1171

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Abstract

Theory of electron-phonon field-induced tunnel scattering in polar semiconductors under uniform electric field is considered. It is assumed that a non-degenerate n-type semiconductor has a spherical and parabolic simple band structure. On the basis of the study is the phenomenon of semiconductor bands tilting by the perturbing potential of an electric field. In that case electron eigenfunctions are not-plane waves or Bloch functions. They are determined by the Airy functions. An expression for the probability of electron intra-valley field-induced tunnel transitions related to polar optical phonon emission and absorption is obtained and analyzed.

Item Type:Article
Subjects:Physics > 42.Optics
Physics > 72.Electronic transport in condensed matter
ID Code:728
Deposited By:Prof. Vladimir Aroutiounian
Deposited On:13 Mar 2015 18:59
Last Modified:13 Mar 2015 18:59

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