Armenian Journal of Physics

BEHAVIOR OF A SHALLOW DONOR BINDING ENERGY NEAR A SEMICONDUCTOR SURFACE IN THE PRESENCE OF SCANNING TUNNELING MICROSCOPE TIP

Djotyan, A.P. (2014) BEHAVIOR OF A SHALLOW DONOR BINDING ENERGY NEAR A SEMICONDUCTOR SURFACE IN THE PRESENCE OF SCANNING TUNNELING MICROSCOPE TIP. Armenian Journal of Physics, 7 (1). pp. 38-49. ISSN 1829-1171

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Abstract

The ground state energy and the extend of the wavefunction of a neutral donor located near a semiconductor surface in the presence of a STM metallic tip held at a fixed potential is obtained within a variational approach. We apply the effective mass approximation and use a variational wavefunction that takes into account the influence of all image charges that arise due to the presence of a metallic tip. The latter lowers the shallow donor energy which is lower than in the case when the donor is located at the same distance near a plane semiconductor-metal interface. The ionization process of a donor center due to the tip positive voltage is considered. In the case of negative voltage on the tip we observe a nonmonotonic behavior of the impurity electron binding energy.

Item Type:Article
Subjects:Physics > 72.Electronic transport in condensed matter
Physics > 73.Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures
ID Code:666
Deposited By:Prof. Vladimir Aroutiounian
Deposited On:13 Apr 2014 21:48
Last Modified:13 Apr 2014 21:48

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