Armenian Journal of Physics

BaxSr1-x TiO3/pc-Si HETEROJUNCTION CAPACITANCE

Buniatyan, V.V. and HUCK, C. and Poghossian, A. and Aroutiounian, V.M. and SCHOENING, M.J. (2013) BaxSr1-x TiO3/pc-Si HETEROJUNCTION CAPACITANCE. Armenian Journal of Physics, 6 (4). pp. 188-197. ISSN 1829-1171

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Abstract

An-amorphous BaxSr1-x TiO3/ polycrystalline (pc) silicon anis-type heterojunction capacitance was evaluated theoretically and studied experimentally, taking into account the presence of oxygen vacancies in ferroelectric film as well as non-linear dependence of the ferroelectric films dielectric permittivity on the electric field for different values of oxygen vacancies concentration and doping levels in silicon.

Item Type:Article
Subjects:Physics > 81.Materials science
Physics > 85.Electronic and magnetic devices; microelectronics
ID Code:646
Deposited By:Prof. Vladimir Aroutiounian
Deposited On:15 Dec 2013 12:27
Last Modified:15 Dec 2013 12:27

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