Armenian Journal of Physics

BaxSr1-x TiO3/pc-Si HETEROJUNCTION

Buniatyan, V.V. and Huck, C. and Poghossian, A. and Aroutiounian, V.M. and Schoening, M.J. (2013) BaxSr1-x TiO3/pc-Si HETEROJUNCTION. Armenian Journal of Physics, 6 (4). pp. 177-187. ISSN 1829-1171

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Abstract

An amorphous BaxSr1-x TiO3/pc - Si (polycrystalline silicon) anisotropic heterojunction was systematically investigated in terms of built-in potentials, interface potentials and space - charge depletion layer widths. The presence of oxygen vacancies as well as the non-linear dependence of the dielectric permittivity of ferroelectric films on the electric field is considered for different values of oxygen vacancies and doping levels in silicon.

Item Type:Article
Subjects:Physics > 81.Materials science
Physics > 85.Electronic and magnetic devices; microelectronics
ID Code:645
Deposited By:Prof. Vladimir Aroutiounian
Deposited On:15 Dec 2013 12:27
Last Modified:15 Dec 2013 12:27

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