Armenian Journal of Physics

Investigation of Characteristics of Semiconductor Detectors of a-C/n-Si Heterostructure and p-n Junctions by Means of Registration of Charged Particles

Ohanyan, K.S. (2013) Investigation of Characteristics of Semiconductor Detectors of a-C/n-Si Heterostructure and p-n Junctions by Means of Registration of Charged Particles. Armenian Journal of Physics, 6 (3). pp. 132-140. ISSN 1829-1171

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Abstract

Today different types of particle registration as well as semiconductor detectors have obtained wide application in basic and applied investigations of high energy and nuclear physics. The provide accurate measurements of fluxes of particle energies and ionizing radiation.

Item Type:Article
Subjects:Physics > 07.Instruments, apparatus, components common to several branches of physics
Physics > 20.Nuclear physics
ID Code:619
Deposited By:Prof. Vladimir Aroutiounian
Deposited On:18 Sep 2013 08:50
Last Modified:18 Sep 2013 08:50

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