Armenian Journal of Physics

SHAPE TRANSITION OF STRAIN-INDUCED InAsSbP ISLANDS AT LIQUID-PHASE EPITAXY ON InAs (100) SUBSTRATE: FROM PYRAMID TO SEMIGLOBE

Gambaryan, Karen and Aroutiounian, Vladimir and Simonian, Arpine and Boeck, Torsten (2008) SHAPE TRANSITION OF STRAIN-INDUCED InAsSbP ISLANDS AT LIQUID-PHASE EPITAXY ON InAs (100) SUBSTRATE: FROM PYRAMID TO SEMIGLOBE. Armenian Journal of Physics, 1 (3). pp. 208-218. ISSN 1829-1171

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Abstract

The Liquid Phase Epitaxy (LPE) technique is used for self-assembled InAsSbP-based strain-induced islands formation on InAs(100) substrates. Here we show that such islands, as they decrease in size, are undergoing a shape transition. As the islands volume decrease, the following succession of shape transitions has been detected: truncated pyramid, {111} facetted pyramid, {111} and partially {105} facetted pyramid, completely unfacetted “pre-pyramid”, which gradually evolve to semiglob. The morphology, size, shape and composition of these objects are investigated by scanning electron microscope (SEM) and Energy Dispersive X-Ray Analysis (EDXA) technique. A critical size (~550 nm) of the InAsSbP-based strain-induced islands shape transformation from “pre-pyramid” to semiglobe is experimentally detected and, in addition, theoretically explained and calculated. Proposed theoretical approach has been also employed and tested for Si1xGex model system islands grown on a Si(001) substrate. It is shown that for both materials the theoretically calculated values of the critical size coincide with the experimentally obtained data.

Item Type:Article
Subjects:Physics > 81.Materials science
ID Code:61
Deposited By:Prof., PhD Karen Gambaryan
Deposited On:10 Dec 2008 16:48
Last Modified:19 Apr 2011 02:40

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