Armenian Journal of Physics

NANOSTRUTURAL ANALYSIS AND SIMULATION OF THERMAL ANNEALING OF Ni/Au MULTILAYERS ON Si

Zolanvari, A. and Sadeghi, H. (2012) NANOSTRUTURAL ANALYSIS AND SIMULATION OF THERMAL ANNEALING OF Ni/Au MULTILAYERS ON Si. Armenian Journal of Physics, 5 (4). pp. 184-193. ISSN 1829-1171

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Abstract

We deposited three different Ni(20 nm,15 nm)/Au(10 nm,5 nm)/Si(111) multilayers using the dc sputtering method in order to study the nanostructure evolution by X-ray diffraction (XRD) and in situ High Temperature XRD (HT-XRD), with increasing annealing temperature. The nanostructural properties of the Ni/Au contact to p-Si were also investigated during annealing. The Ni/Au/Si contact layers were annealed in situ in vacuum chamber for 180 minute up to 500°C. The Ni layer was in contact with the p-Si before annealing. However, after annealing, the Au layer had diffused from the top layer to the interface. The Au layer on the p-Si surface resulting from the in diffusion of Au atoms during annealing may contribute to ohmic contact formation. Based on the Fuzzy Model Simulation (FMS), we also confirm the behavior of Ni/Au system with increasing annealing temperature.

Item Type:Article
Subjects:Physics > 81.Materials science
ID Code:546
Deposited By:Prof. Vladimir Aroutiounian
Deposited On:29 Jan 2013 19:12
Last Modified:18 Sep 2013 09:21

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