Armenian Journal of Physics

GaAsSbP QUASITERNARY MATERIAL SYSTEM: NANOSTRUCTURES GROWTH FEATURES AND IMMISCIBILITY ANALYSIS

Gambaryan, K.M. and Simonyan, A.K. and Aroutiounian, V.M. (2012) GaAsSbP QUASITERNARY MATERIAL SYSTEM: NANOSTRUCTURES GROWTH FEATURES AND IMMISCIBILITY ANALYSIS. Armenian Journal of Physics, 5 (3). pp. 156-163. ISSN 1829-1171

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Abstract

The continuum elasticity model is applied to quantitatively investigate the growth features and nucleation mechanism of quantum dots (QDs), nanopits, and coopetative QDs–nanopits structures in GaAsSbP quasiternary systems. We determine the critical lattice mismatch of GaAs/GaAsSbP system equal to when the growth mode changes from nucleation of QDs to formation of nanopits. We show that the island’s total energy and volume for that system are decreasing with increasing of the strain. The free energy of mixing for GaAs1xySbxPy quasiternary system is calculated and studied and its 3D sketch is plotted. It is demonstrated that there are some immiscibility gap for that system, which strongly depends on temperature.

Item Type:Article
Subjects:Physics > 81.Materials science
ID Code:516
Deposited By:Prof. Vladimir Aroutiounian
Deposited On:01 Oct 2012 12:55
Last Modified:01 Oct 2012 12:55

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