Armenian Journal of Physics

INFLUENCE OF DEPOSITION RATE ON THE ELECTRICAL AND OPTICAL PROPERTIES OF ELECTRON-BEAM EVAPORATED InSb FILMS

Rahul, Rahul and Verma, A.K. and Tripathi, R.S.N. and Vishwakarma, S.R. (2012) INFLUENCE OF DEPOSITION RATE ON THE ELECTRICAL AND OPTICAL PROPERTIES OF ELECTRON-BEAM EVAPORATED InSb FILMS. Armenian Journal of Physics, 5 (2). pp. 86-94. ISSN 1829-1171

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Abstract

Thin films of 300 nm thickness of non-stoichiometric indium antimonide (In0.66Sb0.34) have been deposited with different deposition rate onto well-cleaned glass substrate by electron beam evaporation technique. The electrical resistivity decreases with increasing temperature, showing the semiconducting behavior. Hall measurements indicate that the films were n-type, having carrier concentration ~1018 cm-3 and mobility ~103 cm2/Vs for the film thickness of 300 nm with different deposition rate. Activation energy of the films with deposition rate is determined. The direct band gap has been calculated by Fourier transform infrared absorption spectra recorded at room temperature. The optical band gap varies in the range 0.21–0.23 eV with deposition rate of films.

Item Type:Article
Subjects:Physics > 81.Materials science
ID Code:493
Deposited By:Prof. Vladimir Aroutiounian
Deposited On:11 Jul 2012 17:11
Last Modified:11 Mar 2013 11:49

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