Armenian Journal of Physics

THRESHOLD VOLTAGE MODEL OF SiC SHORT CHANNEL MOSFET’s WITH DEEP IMPURITY LEVELS AND TRAPS

Buniatyan, V.V. and Hayrapetyan, V.M. (2008) THRESHOLD VOLTAGE MODEL OF SiC SHORT CHANNEL MOSFET’s WITH DEEP IMPURITY LEVELS AND TRAPS. Armenian Journal of Physics, 1 (2). pp. 174-177. ISSN 1829-1171

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Abstract

A new model of short-channel SiC MOSFET’s threshold-voltage simulation is presented. The model is based on detailed analysis of the charge conservation law in the region bounded by the gate electrode and the semiconductor bulk.

Item Type:Article
Subjects:Physics > 72.Electronic transport in condensed matter
ID Code:49
Deposited By:Prof. Vladimir Aroutiounian
Deposited On:27 Aug 2008 14:28
Last Modified:19 Apr 2011 02:40

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