Armenian Journal of Physics

ARTIFICAL INDUCTOR EFFECT ON MOS TRANSISTORS

Buniatyan, V.V. and Travajyan, G.M. and Asatryan, A.H (2008) ARTIFICAL INDUCTOR EFFECT ON MOS TRANSISTORS. Armenian Journal of Physics, 1 (1). pp. 57-61. ISSN 1829-1171

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Abstract

Recently the interest to the radio-frequency integrated circuits is sharply increased, connected with the rapid development of mobile communication. The modern integrated technology for RF applications (800 МHz­2.5G Hz) rather easily provides creation of active devices. However, the presence of high-quality passive components represents a serious problem for integrated realization [1, 2]. The high­quality inductor in monolithic performance is the most difficult to realize by methods, which would be compatible to modern planar manufacturing techniques of micro­ and nanoscale integrated circuits.bb

Item Type:Article
Subjects:Physics > 72.Electronic transport in condensed matter
ID Code:24
Deposited By:INVALID USER
Deposited On:26 Apr 2008 17:49
Last Modified:19 Apr 2011 02:40

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