Armenian Journal of Physics

NOISE PROPERTIES OF THE STRUCTURES CONTAINING A LAYER OF POROUS SILICON, IN AIR AND IN CONDITIONS OF GAS ADSORPTION

Mkhitaryan, Z.H. and Shatveryan, A.A. and Gasparyan, F.V. (2008) NOISE PROPERTIES OF THE STRUCTURES CONTAINING A LAYER OF POROUS SILICON, IN AIR AND IN CONDITIONS OF GAS ADSORPTION. Armenian Journal of Physics, 1 (1). pp. 104-107. ISSN 1829-1171

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Abstract

Noise properties of the structures containing a layer of porous silicon (PS), at adsorption of active gases were investigated by us for PS with porosity of 50% [1, 2]. The purpose of the present work was an experimental research of low-frequency noise in layers of PS with porosity of 73% in dry air, in a mix dry air + 0.4% CO and in a mix dry air + 2% CO, as well as the determination of the noise parameter and parameter in the frequency dependence of the noise voltage spectral density from experimental data.

Item Type:Article
Subjects:Physics > 73.Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures
ID Code:22
Deposited By:INVALID USER
Deposited On:26 Apr 2008 17:52
Last Modified:19 Apr 2011 02:40

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