TEMPERATURE DEPENDENCES OF CURRENT-VOLTAGE CHARACTERISTICS IN STRUCTURES WITH POROUS SILICON LAYER UNDER INFLUENCE OF HYDROGEN ADSORPTION

Abstract

Porous silicon (PS) is a promising nanomaterial combining the available technology and a diversity of physical properties. The constant decrease in dimensions in semiconductor electronics significantly changes the parameters and sometimes principles of semiconductor devices, imposing a need for new approaches and new materials. Therefore the study of properties of PS may become a basis for new generation electronic devices. An important property of PS is the highly developed inner surface, accessible to ambient molecules. This stipulates a high adsorptive activity of PS and influences its electrophysical properties. The main advantage of PS over other existing sensors is its ability to sense gases at room temperature. It appeared interesting to investigate the changes of PS sensing characteristics in the temperature range from 20°C to 90°C (due to fragility of the inner pore network higher temperatures are not possible).