Armenian Journal of Physics

GENERATION-RECOMBINATION PHENOMENA IN THIN METAL OXIDES FILMS UNDER THE INFLUENCE OF GAMMA RADIATION

Arshak, K. and Korostynska, O. (2008) GENERATION-RECOMBINATION PHENOMENA IN THIN METAL OXIDES FILMS UNDER THE INFLUENCE OF GAMMA RADIATION. Armenian Journal of Physics, 1 (1). pp. 47-51. ISSN 1829-1171

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Abstract

Deep understanding of physical properties of the materials under the influence of radiation is vital for the effective design of devices for radiation-sensing applications. Mixing oxides in various proportions was found to control the radiation sensing properties of the semiconductor films in terms of their sensitivity to γ-radiation exposure and working dose region.

Item Type:Article
Subjects:Physics > 73.Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures
ID Code:19
Deposited By:INVALID USER
Deposited On:26 Apr 2008 17:57
Last Modified:19 Apr 2011 02:39

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